1.     Local Structural Phase Determination of Ni Silicide Thin-Films Using EXAFS M. A. Sahiner, P. Y. Hung, W-Y. Loh, P. S. Lysaght, D. Guerrero, J. C. Woicik Physica Status Solidi C 9, 2184-2188 (2012).

2.     Spectroscopic Analysis of Al and N Diffusion in HfO₂ P. S. Lysaght, J. C. Woicik, M. A. Sahiner, J. Price, C. Weiland, and P. D. Kirsch, Journal of Applied Physics 112, 064118 (2012).

3.     Formation Of Arsenic Rich Silicon Oxide Under Plasma Immersion Ion Implantation And Laser Annealing F. Meirer, E. Demenev, D. Giubertoni, S. Gennaro, L. Vanzetti, G. Pepponi, M. Bersani, M. A. Sahiner, M. A. Foad, J. C. Woicik, A. Mehta, P. Pianetta, American Institute of Physics Proceedings In Ion Implantation Technology 1496, 183 (2012).

4.     Local Structural Modifications of the HfO2 layer in the Al2O3 Capped High-k Dielectric Films as Probed by EXAFS, M. A. Sahiner, P. S. Lysaght, J. C. Woicik, C. S. Park, J. Huang, G. Bersuker, W. Taylor, P. D. Kirsch, and R. Jammy, Phys. Status Solidi A 209, No. 4, 679-682 (2012).

5.      Deactivation of sub-melt laser annealed arsenic ultra-shallow junctions in silicon during subsequent thermal treatment, D. Giubertoni, G. Pepponi, M.A. Sahiner, S. P. Kelty, S. Gennaro, M. Bersani, M. Kah, K.J. Kirkby, R. Doherty, M.A. Foad, F. Meirer, C. Streli, J.C. Woicik, and P. Pianetta, J. Vac. Sci. Technol. B 28 (1) C1B1-5, (2010).

6.     Synchrotron XPS and EXAFS Identification of Chemical State and Crystal Phase Changes of HfO2 Films Doped with Si, N, Al, and La, P Lysaght, J Woicik, M Sahiner, P Kirsch, G Bersuker, B Lee, R Jammy, VLSl Technology, Systems and Applications, VLSI-TSA 82, IEEE (2010).

7.     Characterization of Junction Activation and Deactivation Using non-Equilibrium Annealing: Solid Phase Epitaxy, Spike Annealing, Laser Annealing M. Bersani, G. Pepponi, D. Giubertoni, S. Gennaro, M. A. Sahiner, S. P. Kelty, M. Kah, K. J. Kirkby, R. Doherty, M. A. Foad, F. Meirer, C. Streli, J. C. Woicik and P. Pianetta, IEEE Proceedings on The 9th International Workshop on Junction Technology p64-68 (2009).

8.     Local Crystal Structure Modifications in Pulsed Laser Deposited Colossal Magnetoresistive Oxide Thin Films, M. Alper Sahiner, Wiqar Shah, Marc Aranguren, Jeffrey Serfass, Joseph C. Woicik, Mater. Res. Soc. Symp. Proc. 1118, K05-08, (2009).

9.     Local Crystal Structural Modifications in Pulsed Laser Deposited High-k Dielectric Thin Films on Silicon and Germanium, M. Alper Sahiner, Joseph C. Woicik, Timothy Kurp, Jeffrey Serfass, Marc Aranguren  Materials Science in Semiconductor Processing, 11, 245 (2008).

10.  Correlation of local structure and electrical activation in arsenic ultra shallow junctions in silicon, D. Giubertoni, G. Pepponi, S. Gennaro, and M. Bersani, M. A. Sahiner, S. P. Kelty, R. Doherty, M. A. Foad, M. Kah, K. J. Kirkby, J. C. Woicik, P. Pianetta, Journal of Applied Physics, 104, 103716 (2008).

11.  Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature, P. S. Lysaght, Joseph C. Woicik, M. A. Sahiner, S. C. Song, B -H. Lee and R. Jammy, Journal of Non-crystalline Solids 354, 399 (2008).

12.  Physical Characteristics of HfO2 Dielectrics at the Physical Scaling Limit, P Lysaght, J Woicik, M Sahiner, P Kirsch, G Bersuker, B Lee, R Jammy, VLSl Technology, Systems and Applications, VLSI-TSA 156, IEEE (2008).

13.   Characterizing crystalline polymorph transitions in HfO₂ by extended x-ray absorption fine-structure spectroscopy, Patrick Lysaght, Joseph Woicik, M. Alper Sahiner, Byoung-Hun Lee, Raj Jammy, Applied Physics Letters, 91, 122910 (2007).

14.  Pulsed Laser Deposition and Characterization of Hf Based High-k Dielectric Thin Films, M. Alper Sahiner, J. C. Woicik, P. Gao, P. McKeown, M. C. Croft, M. Gartman, B. Benapfl, Thin Solid Films (Elsevier) 515, 6548 (2007).

15.  Implantation and Activation of High Concentrations of Phosphorus and Boron in Germanium, Yong Seok Suh, M. S. Carroll, R. A. Levy, G. Bisognin, D. De Salvador and M. A. Sahiner, MRS Proceedings 891, EE 7.20.1 (2006).

16.  Implantation and Activation of High Concentrations of Boron in Germanium Y.S. Suh, M. S. Carroll, R. A. Levy, M. A. Sahiner, G. Bisognin, and C. A. King, IEEE Transactions on Electron Devices 52, 2416-2421 (2005).

17.  The Local Structural Characterization of the Inactive Clusters in B, BF₂ and BF₃ Implanted Si Wafers Using X-ray Techniques, M. Alper Sahiner, Daniel F. Downey, Steven W. Novak, Joseph C. Woicik, Dario A. Arena, Microelectronics Journal (Elsevier), 36, 522-526 (2005).

18.  Modeling of Boron and Phosphorus Implantation into (100) Germanium, Y.S. Suh, M. S. Carroll, R. A. Levy, M. A. Sahiner, G. Bisognin, and C. A. King, IEEE Transactions on Electron Devices 52, 91 (2005).

19.  Clustering Analysis In Boron And Phosphorus Implanted (100) Germanium By X-Ray Absorption Spectroscopy, M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, C. A. King, Y. S. Suh, R. A. Levy, Temel Buyuklimanli, Mark Croft MRS Proceedings 864, E7.8.1-5 (2005).

20.  XAFS as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in SiGe Layers, M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, Charles W. Magee, Steven W. Novak, Joseph C. Woicik, MRS Proceedings 810, C11.10.1 (2004)

21.  The role of Ge in cluster formation in B and BF₂ implanted Si wafers after Ge pre-amorphization, M. Alper Sahiner, Charles W. Magee, Daniel F. Downey, Edwin Arevalo, Joseph C. Woicik, MRS Proceedings 792, R7.3.1 (2004).

22.  Phosphorus and Boron Implantation into (100) Germanium, Y. S. Suh, M. S. Carroll, R. A. Levy, A. Sahiner and C. A. King, MRS Proceedings 809, B8.11.1 (2004).

23.  The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS, M. A. Sahiner, S. W. Novak, J. C. Woicik, Y. Takamura, P. B. Griffin, J. D. Plummer, MRS Proceedings 717, C3.6.1 (2003).

24.  Non-routine Dopant, Impurity, and Stoichiometry Characterization of SiGe, SiON, and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry, C. W. Magee, T. H. Buyuklimanli, J. W. Marino, S. W. Novak, M. A. Sahiner, MRS Proceedings 717, C61.1 (2002).

25.  Determining the Ratio of the Precipitated versus Substituted Arsenic by XAFS and SIMS in Heavy Dose Arsenic Implants in Silicon, M. A. Sahiner, S. W. Novak, J. Woicik, J. Liu, V. Krishnamoorthy, MRS Proceedings 669, J5.8.1 (2001).

26.  Arsenic Clustering and Precipitation Analysis in Ion-Implanted Si Wafers by X-ray Absorption spectroscopy and SIMS, M. A. Sahiner, S. W. Novak, J. Woicik, J. Liu, V. Krishnamoorthy, IEEE Transactions Ion Implantation Technology-2000, Vol 00EX432, 600 (2000).

27.  Two-Dimensional Small Angle Scattering from Submonolayer Islands, A. Sahiner, P. F. Miceli, C. Botez, W.C. Elliott, and P. W. Stephens, Advances in X-ray Analysis 43, 169 (2000).

28.  Pressure-induced Bond Buckling in YBa₂Cu₃O_7-d, A. Sahiner, D. Crozier, D. T. Jiang, and R. Ingalls, Phys. Rev. B 59, 3902 (1999).

29.  The Effects of Thermal Shocking on the Residual Stress in Si₃N₄ Ceramic Composites, A. Sahiner, D. Wittmer, and M. Sweeney, Nuclear Instruments and Methods in Physics Research B 133, 73 (1997).

30.  Electronic Structure Anisotropy and d-Configuration in Ni-Based Materials, A. Sahiner, M. Croft, S. Guha, Z. Zhang, M. Greenblatt, I. Perez, P. A. Metcalf, H. Jahns, G. Liang, Phys. Rev. B 53, 9745 (1996).

31.  Polarized XAS Studies of Ternary Nickel Oxides, A. Sahiner, M. Croft, S. Guha, I. Perez, Z. Zhang, M. Greenblatt, P. A. Metcalf, H. Jahns, G. Liang, Phys. Rev. B 51 , 5879 (1995).

32.  XANES Study of Hydrogen Incorporation in a Pd-capped Thin Film, M. W. Ruckman, G. Reisfeld, N. M. Jisrawi, M. Weinert, M. Strongin, H. Wiesmann, M. Croft, A. Sahiner, D. Sills, P. Ansari, Phys. Rev. B 57, 3881 (1998).

33.  Fe-fcc Layer Stabilization in [111]-Textured Fe/Pt Multilayers, M. Croft, D. Sills, A. Sahiner,A. F. Jankowski, P. H. Ansari, E. Kemly , F. Lu, Y. Jeon, T. Tsakalakos, Nanostruct. Mat. 9, 413 (1997).

34.  Ruddlesden-Popper Zirconium Sulfides--a novel preparation method and characterization of electronic structure, J. Yan, M. Greenblatt, A. Sahiner, D. Sills, M. Croft, Journal of Alloys and Compounds 229, 216 (1995).

35.  X-Ray Absorption Studies of Electron Doping and Band Shifts in Re_2-x Ce_xCuO₄ (R=Pr, Nd, Sm, Eu, Gd), G. Liang, Y. Guo, W. Xu, W. Li, D. Badresingh, M. Croft, J. Chen, A. Sahiner, Beam-hoan O, J. T. Markert, Phys. Rev. B 51, 1258 (1995).

36.  Origin of Polychromism of {Cis} Square-Planar Platinum(II) Complexes: Comparison of Two Forms of Pt(2,2-bpy)(Cl)2, R. H. Herber, M. Croft, M. J. Coyer, B. Bilash, A. Sahiner, Inorganic Chemistry 33, 2422 (1994).

37.  X-Ray Absorption Near Edge Structure of IBi₂Sr₂CaCu₂O_y, G.Liang, A. Sahiner, M. Croft, J. Chen, J. Peng, X.-D. Xiang, A. Zettle, F. Lu, Phys. Rev. B 47, 1029 (1993).