Research  

 

 

 

 

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Advanced Materials Synthesis and X-ray Characterization  Laboratory
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Scintag Pad V x-ray diffractometer with Cu and Cr x-ray tubes

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Pulsed Laser Deposition System with PVD deposition chamber and TUI-Thinfilmstar Excimer Laser

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A complete solid state materials synthesis laboratory  with high temperature Lindberg tube furnaces and high pressure Carver pellet presser.

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Rigaku AFC5S single crystal (4-circle) diffractometer

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HMS-3000 Hall Effect Measurement System.

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Capacitance  and electrical resistivity (4-pt probe) measurement systems

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 Laboratory and group pictures

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Grants and Awards:
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PI-National Science Foundation (NSF-MRI Grant) ($383,208)  to acquire a Thin Film Pulsed Laser Deposition (PLD).   Single crystal thin films of colossal magneto-resistive (CMR) and high-k dielectric materials are deposited by PLD (see the complete list of materials of interest listed below).

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PI-Research Corporation-Cottrell College Science Award ($40,574) "Pulsed Laser Deposition and Structural and Electrical Characterization of High-k Dielectric Films for the Replacement of SiO2 in CMOS Gate Region"

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PI-Research Corporation Cottrell College Science Award- “Correlation of Growth Conditions and Local Structure of Hafnium Based Dielectric Thin Films” $52,608 (pending).

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Co-PI-National Science Foundation “Integrating Science Education and Graduate Training (ISEGT) at Seton Hall University (SHU): an NSF GK-12 Teaching Fellows Program” $2,584,152 (pending) Co-PI.

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SHU Teaching Learning and Technology Center Summer Fellowship “Synthesis and Characterization of Thin Films of Gate Dielectric Materials” $4000 (2007).

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SHU Provost’s Challenge Award “Probing the Clustering Problem in Impurity Doped Semiconductor Materials” $4500 (2007)

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SHU Provost’s Challenge Award “Advanced Synthesis and Characterization of High-k Gate Dielectric Thin Films for Future Semiconductor Devices” $4500 (2006)

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SHU -TLTC SEED Grant $3,000 (2005)

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University Research Council Grant $4,000 (2004)

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SHU-TLTC SEED Grant $3,000 (2004)

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X-ray absorption spectroscopy (XAFS) analysis of the materials of interest below are being performed at the National Synchrotron Light Source (NSLS) of Brookhaven National Laboratory (BNL)
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Beamlines X23A2, X19A, X18B, and U7A

Materials of Interest
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Strongly correlated systems and superconductors
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Perovskites (transition metal oxides)

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Colossal magnetoresistivity (CMR) La(Ca,Sr)MnO systems

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Pulsed laser deposition  of thin films of CMR materials

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Local structural characterization by XAFS.

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Pulsed laser deposition of transition metal oxides and layered high-Tc superconductors

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Pressure related superconducting properties of YBa2Cu3O6+d

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Semiconductors
bulletHigh-k dielectrics
bulletPulsed laser deposition of high-k dielectric thin films with varying stoichiometry of the transition metal oxides on silicon substrates. 
bulletHigh-k dielectric thin films on (HfO2, ZrO2) on germanium substrate.
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Local structural characterization  of Y, Zr and Hf oxides (in collaboration with NIST, EAG, and SEMATECH)

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Dopant activation in in heavily doped Si (in collaboration with Varian Semiconductor Equipment Associates, EAG, and NIST)
bulletAs clustering in ion implanted silicon wafers, Applied Materials, FBK, Italy
bulletB activation in silicon (Varian Semiconductor Equipment Associates).
bulletB trapping mechanism in C doped SiGe HBT's (in collaboration with Agere Systems and Sandia National Lab.)
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Sb precipitation and clustering (in collaboration with Stanford University)

 

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